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NIS6201 Product Preview Floating, Regulated Charge Pump
The NIS6201 charge pump is designed to provide economical, low level power to circuits above ground level potential, such as the drive for ORing diodes. It is a very cost-effective replacement for a small, isolated, switching power supply. It contains an internal linear regulator, and a versatile charge pump to allow bias voltage supplies to be transferred from a ground referenced source to a higher potential. The design of the charge pump allows for any isolation voltage required, as the high voltage components are external to the pump and can be sized accordingly.
Features http://onsemi.com MARKING DIAGRAM
8 8 1 1 SOIC-8 NB CASE 751 TBD ALYW
* * * *
Integrated Linear Regulator and Charge Pump Thermal Limit Protection Adjustable Voltage Output High Voltage Isolation
A L Y W
= Assembly Location = Wafer Lot = Year = Work Week
Applications
* ORing Diodes * Floating Supervisory Circuits * LED Driver
VCC
PIN CONNECTIONS
PWRGND 1 PWRGND 2 SIGGND 3 COMP 4 (Top View) 8 7 6 5 PWRGND DRIVE VREG VCC
0.50 V
ORDERING INFORMATION
+ - Regulator + - 50 mV Overcharge 1.0 MHz Oscillator Drive TBD Device Package SOIC-8 Shipping TBD
30 V
Comp
Vreg
Gnd
Figure 1. Charge Pump Block Diagram
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.
(c) Semiconductor Components Industries, LLC, 2004
1
May, 2004 - Rev. P2
Publication Order Number: NIS6201/D
NIS6201
PIN FUNCTION DESCRIPTION
Pin 1, 2, 8 3 4 5 6 7 Symbol PWRGND SIGGND COMP VCC VREG DRIVE Ground reference pin for driver current. Ground reference pin for control circuits. This should be connected to power ground on the PCB. The feedback and compensation network of the linear regulator are connected to this pin. Input power to chip. There is an internal clamp at 30 V to allow for a shunt regulator circuit on this pin for high voltage inputs. This is the regulated output of the internal linear regulator. Output drive of oscillator, that drives external diode/capacitor network. Description
MAXIMUM RATINGS (Maximum ratings are those, that, if exceeded, may cause damage to the device. Electrical Characteristics are not
guaranteed over this range.) Rating Input Voltage, Operating Drive Current, Peak Drive Current, Average Thermal Resistance, Junction-to-Air 0.1 in2 Copper 0.5 in2 Copper Thermal Resistance, Junction-to-Lead (Pin 1)2 Power Dissipation @ TA = 25C SO-8 Leadless Energy Rating SO-8 Leadless Operating Temperature Range Non-operating Temperature Range Lead Temperature, Soldering (?? Sec) Symbol VCC IDpk IDavg QJA - - QJL Pmax Emax Tj Tj TL - - - -40 to 125 -55 to 150 - C/W W J C C C Value -0.3 to 18 3.0 0.05 Unit V A A C/W
ELECTRICAL CHARACTERISTICS (Unless otherwise noted: VCC = 15 V, Vreg = 12 V, Tj = 25C.)
Characteristic OSCILLATOR Frequency DRIVER On Resistance, High Side FET On Resistance, Low Side FET LINEAR REGULATOR Reference Voltage Temperature Coefficient Headroom (VCC-Vreg) Sink Current (Vpin? v 300 mV, Low Z State) Leakage Current (Vpin? = 18 V, High Z State) TOTAL DEVICE Minimum Operational Input Voltage Bias Current (Operational) Vmin IBias 7.0 - - 2.0 - - V mA Vref - Vhead ILow ILeak 490 - - - - 500 - 0 5.0 20 510 - - - - mV - V mA mA RDSon(hi) RDSon(low) - - 20 20 - - W W fosc 0.9 1.0 1.1 MHz Symbol Min Typ Max Unit
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NIS6201
BAS16LT1 1.0 mF BAS16LT1 0.1 mF 7 6 22 k 0.1 mF 1.0 k 1.0 mF 48 V BAS16LT1 Load NIS6111 + VCC Pwr Gnd Sig Gnd Comp Vreg Charge Pump 0.1 mF Drive
1.0 mF
5 12 V 1, 2, 8 NIS6201 3 4
DC-DC Converter
Figure 2. Application Circuit with Better ORing Diode
Figure 3. Application Circuit for Improved Regulation and Transient Response
VCC + 8.0 V Pwr Gnd Sig Gnd Comp
0.1 mF
Charge Pump
Drive
1.0 mF
Vreg 1.0 mF
Figure 4. Current Regulated, Voltage Doubler
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NIS6201
PACKAGE DIMENSIONS
SOIC-8 NB CASE 751-07 ISSUE AB
-X- A
8 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244
B
1 4
S
0.25 (0.010)
M
Y
M
-Y- G C -Z- H D 0.25 (0.010)
M SEATING PLANE
K
N
X 45 _
0.10 (0.004)
M
J
ZY
S
X
S
DIM A B C D G H J K M N S
SOLDERING FOOTPRINT*
1.52 0.060 7.0 0.275 4.0 0.155
0.6 0.024
1.270 0.050
SCALE 6:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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NIS6201/D

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